{"created":"2025-01-07T07:14:34.828944+00:00","id":2000081,"links":{},"metadata":{"_buckets":{"deposit":"4ef2488e-406a-486f-9b50-60a9f2266dd8"},"_deposit":{"created_by":8,"id":"2000081","owners":[8],"pid":{"revision_id":0,"type":"depid","value":"2000081"},"status":"published"},"_oai":{"id":"oai:socu.repo.nii.ac.jp:02000081","sets":["1623632832836:1735019259381","1735019597938:1735019748140"]},"author_link":[],"item_30001_bibliographic_information17":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2024-03-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"26","bibliographicPageStart":"21","bibliographic_titles":[{"bibliographic_title":"山陽小野田市立山口東京理科大学紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Bulletin of Sanyo-Onoda City University","bibliographic_titleLang":"en"}]}]},"item_30001_creator2":{"attribute_name":"作成者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"阿武, 宏明","creatorNameLang":"ja"},{"creatorName":"ANNO, Hiroaki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"橋國, 克明","creatorNameLang":"ja"},{"creatorName":"HASHIKUNI, Katsuaki ","creatorNameLang":"en"}]}]},"item_30001_description8":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":" The effect of Ga−P co-doping on the electronic structure has been investigated for p-type clathrate thermoelectric semiconductor Ba8Cu6Ge40 by density functional theory (DFT) to study the possibility of carrier control. In Ba8Cu6Ge40, the Fermi energy EF lies in the valence band, and Ba8Cu6Ge40 is a p-type degenerate semiconductor. For Ga−P, Ga2−P, and Ga3−P co-doping, the EF lies in the conduction band, the energy gap, and the valence band, respectively, indicating that the p/n carrier type and carrier concentration change with the Ga/P ratio. In comparison with Ba8Cu6Ge40, the effect of Ga−P co-doping on the energy dispersion relation at the valence band edge is greater than that at the conduction band edge. Therefore, the effect on the effective mass is greater in the valence band than in the conduction band.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_30001_file22":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2024-03-31"}],"displaytype":"detail","filename":"SU10007000003.pdf","filesize":[{"value":"7.9 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://socu.repo.nii.ac.jp/record/2000081/files/SU10007000003.pdf"},"version_id":"6807175c-2daa-4f35-ba5f-1cb383eb21c0"}]},"item_30001_language10":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_30001_publisher9":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"山陽小野田市立山口東京理科大学","subitem_publisher_language":"ja"},{"subitem_publisher":"Sanyo-Onoda City University","subitem_publisher_language":"en"}]},"item_30001_resource_type11":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_30001_subject7":{"attribute_name":"主題","attribute_value_mlt":[{"subitem_subject":"Thermoelectric generation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Phonon Glass and Electron Crystal (PGEC)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Clathrate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Ba8Cu6Ge40","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Electronic structure","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Ga-P co-doping","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Density functional theory (DFT)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"熱電発電","subitem_subject_language":"ja","subitem_subject_scheme":"Other"},{"subitem_subject":"フォノン・グラス・エレクトロン・クリスタル(PGEC)","subitem_subject_language":"ja-Kana","subitem_subject_scheme":"Other"},{"subitem_subject":"クラスレート","subitem_subject_language":"ja-Kana","subitem_subject_scheme":"Other"},{"subitem_subject":"Ba8Cu6Ge4","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"電子構造","subitem_subject_language":"ja","subitem_subject_scheme":"Other"},{"subitem_subject":"Ga-P同時ドーピング","subitem_subject_language":"ja","subitem_subject_scheme":"Other"},{"subitem_subject":"密度汎関数理論(DFT)","subitem_subject_language":"ja","subitem_subject_scheme":"Other"}]},"item_30001_title0":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"密度汎関数理論によるGa-P同時ドープBa8Cu6Ge40クラスレート の電子構造の研究","subitem_title_language":"ja"},{"subitem_title":"Density Functional Theory Study of Electronic Structure of Ga-P Co-Doped Ba8Cu6Ge40 Clathrate","subitem_title_language":"en"}]},"item_30001_version_type12":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_title":"密度汎関数理論によるGa-P同時ドープBa8Cu6Ge40クラスレート の電子構造の研究","item_type_id":"40001","owner":"8","path":["1735019748140","1735019259381"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2024-03-31"},"publish_date":"2024-03-31","publish_status":"0","recid":"2000081","relation_version_is_last":true,"title":["密度汎関数理論によるGa-P同時ドープBa8Cu6Ge40クラスレート の電子構造の研究"],"weko_creator_id":"8","weko_shared_id":-1},"updated":"2025-01-07T07:14:44.105841+00:00"}